Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect
transistors because of the absence of short-channel effects and of a subthreshold-slope limit.
However, the tunnel devices are ambipolar and, depending on device material properties, they may
have low on-currents resulting in low switching speed. The authors have generalized the tunnel
field-effect transistor configuration by allowing a shorter gate structure. The proposed device is
especially attractive for vertical nanowire-based transistors. As illustrated with device simulations,
the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase
of switching speed, and the decrease of processing complexity.