Title: Tunnel field-effect transistor without gate-drain overlap
Authors: Verhulst, Anne ×
Vandenberghe, William
Maex, Karen
Groeseneken, Guido #
Issue Date: 30-Jul-2007
Series Title: Applied Physics Letters vol:91 issue:5 pages:53102-53102
Abstract: Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect
transistors because of the absence of short-channel effects and of a subthreshold-slope limit.
However, the tunnel devices are ambipolar and, depending on device material properties, they may
have low on-currents resulting in low switching speed. The authors have generalized the tunnel
field-effect transistor configuration by allowing a shorter gate structure. The proposed device is
especially attractive for vertical nanowire-based transistors. As illustrated with device simulations,
the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase
of switching speed, and the decrease of processing complexity.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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