Title: A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon
Authors: Huang, J.L ×
Simoen, Eddy
Claeys, Corneel
Rafi, J.M
Clauws, P #
Issue Date: 2007
Publisher: Springer
Series Title: Journal of Materials Science: Materials in Electronics vol:18 issue:7 pages:705-710
Abstract: N-type high resistivity (HR) magnetic Czochralski (MCz) silicon wafers are hydrogenated via direct hydrogen plasma exposures at 270 degrees C. After the hydrogenation, isochronal annealing and isothermal annealing are carried out up to 450 degrees C. Deep Level Transient Spectroscopy (DLTS) measurement is used to study the deep levels created in the hydrogenated MCz silicon samples. Up to 9 kinds of deep levels are detected. The diffusion-like concentration profiles suggest a clear role of hydrogen in the formation of some defects. A considerable amount of oxygen thermal donors (OTD) is also observed in the hydrogenated samples even after annealing. The formation of the deep levels suggests that care should be taken for some application using the MCz silicon as a HR material.
ISSN: 0957-4522
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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