Compact Modeling of Multi-Domain Ferroelectric FETs: Charge Trapping, Channel Percolation and Nucleation-Growth Domain Dynamics

Xiang, Yang; Garcia Bardon, Marie; Kaczer, Ben; Alam, Md Nur Kutubul; Ragnarsson, Lars-Åke; Kaczmarek, J; Parvais, Bertrand; Groeseneken, G; Van Houdt, J

doi:10.1109/TED.2021.3049761

Compact Modeling of Multi-Domain Ferroelectric FETs: Charge Trapping, Channel Percolation and Nucleation-Growth Domain Dynamics

Author:

Xiang, Yang

Garcia Bardon, Marie ; Kaczer, Ben ; Alam, Md Nur Kutubul ; Ragnarsson, Lars-Åke ; Kaczmarek, J ; Parvais, Bertrand ; Groeseneken, G ; Van Houdt, J

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, Charge trapping (CT), ferroelectric FETs (FeFETs), polarization switching, steep subthreshold slope, threshold voltage (V-TH) programming., 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware