Title: Properties of electron traps generated in the gate oxide
Authors: Zhang, Wenqi
Zhang, Jenny
Lalor, M
Burton, D
Groeseneken, Guido
Degraeve, Robin
Issue Date: 2001
Conference: SISC-Conference; December 2001; Washington, D.C.
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors

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