Title: Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
Authors: Kerber, Andreas
Cartier, Eduard
Pantisano, Luigi
Degraeve, Robin
Groeseneken, Guido
Maes, Herman
Schwalke, U
Issue Date: 2002
Conference: 33rd IEEE Semiconductor Interface Specialists Conference - SISC location:Leuven Belgium date:05/12/02
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors

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