Title: Two types of electron traps generated in the gate silicon dioxide
Authors: Zhang, W.D ×
Zhang, J.F
Lalor, M
Burton, D
Groeseneken, Guido
Degraeve, Robin #
Issue Date: 2002
Series Title: IEEE Transactions on Electron Devices vol:49 issue:11 pages:1868-1875
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science