Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, HYDROGEN, 0401 Atmospheric Sciences, 0901 Aerospace Engineering, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5104 Condensed matter physics

Abstract:

The local composition, electronic properties, and mass transport in adjacent Au/GaN and Ti/Au/GaN interfacial regions were examined by photoelectron spectromicroscopy. It was found that in the Ti/Au/Ga regions, the dominating reactions controlling contact formation mechanism were Ti penetration and formation of TiNx at the interface, the released Ga forming Au gallides. Ti, Au, N, and Ga species were shown in various proportions at this composite metal/GaN interface depending on the formation temperature and the initial thickness of the Au film.