Title: Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface
Authors: Kmieciak, Malgorzata ×
Kittl, Jorge
Janssens, Tom
Lauwers, Anne
Vandervorst, Wilfried
Kottantharayil, Anil
Schram, Tom
Veloso, Anabela
Van Dal, Mark
Maex, Karen
Vantomme, André #
Issue Date: May-2005
Publisher: ECS
Conference: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment location:Quebec, Canada date:16/05/05
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.


All items in Lirias are protected by copyright, with all rights reserved.