Proceedings 43rd IEEE International Reliability Physics Symposium, Date: 2005/04/17 - 2005/04/21, Location: San Jose, CA, USA
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL
Author:
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, interconnect, TDDB, sidewall damage, low-k, sub-100 nm, diffusion barrier, electromigration, stress-induced-voiding, DIELECTRIC-CONSTANT MATERIALS, DIFFUSION BARRIER INTEGRITY, DAMASCENE CU INTERCONNECTS, ELECTROMIGRATION RELIABILITY, PROCESS INTEGRATION, STRESS, PERFORMANCE, TECHNOLOGY, LIFETIME, IMPROVEMENT
Abstract:
Back-end-of-line (BEOL) reliability, comprising barrier, dielectric and current-carrying metal reliability, is a major challenge for future IC generations as the reliability margin of the dielectric/barrier/copper systems is shrinking. In this contribution, the impact of interconnect scaling on BEOL reliability is outlined and illustrated by low-k TDDB, electromigration and stress-induced-voiding results. © 2005 IEEE.