This item still needs to be validated !
Title: 25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Authors: Verheyen, Peter ×
Collaert, Nadine
Rooyackers, Rita
Loo, Roger
Shamiryan, Denis
De Keersgieter, An
Eneman, Geert
Leys, Frederik
Dixit, Abhisek
Goodwin, Michael
Yim, Yong Sik
Caymax, Matty
De Meyer, Christina
Absil, Philippe
Jurczak, Malgorzata
Biesemans, Serge #
Issue Date: 2005
Publisher: IEEE
Host Document: pages:194-195
Conference: Symposium on VLSI Technology. Digest of Technical Papers location:Leuven Belgium date:14/06/05
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.