Materials, Technology, and Reliability of Interconnects, Date: 2005/03/28 - 2005/04/01, Location: San Francisco, CA, USA

Publication date: 2005-01-01
Volume: 863 Pages: 265 - 270
ISSN: 1-55899-816-0
Publisher: Cambridge University Press

MATERIALS, TECHNOLOGY AND RELIABILITY OF ADVANCED INTERCONNECTS-2005

Author:

Li, Yunlong
Tokei, Zsolt ; Mandrekar, T ; Mebarki, Bencherki ; Groeseneken, Guido ; Maex, Karen

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Metallurgy & Metallurgical Engineering, Materials Science, Characterization & Testing, Physics, Condensed Matter, Materials Science, Physics

Abstract:

In this paper, we investigate the effect of copper diffusion barrier integrity on the leakage behavior and dielectric reliability of copper/micro porous organo-silica-glass (OSG) interconnects. Significant differences in the field dependence of TDDB median-time-to-failure are observed when comparing sub-critical and sealing barriers. Also for the temperature acceleration of TDDB, a significant difference is found which is reflected in the thermal activation energies. With fast voltage ramp measurements, I-V curves of samples with subcritical and sealing barriers are compared before and after constant current stresses. Above 1.4 MV/cm, the dominant leakage mechanism is found to be Frenkel-Poole emission regardless of barrier treatments and stress times. Below 1.4 MV/cm, however, the I-V characteristic is modulated by the barrier integrity, which can be attributed to copper diffusion into the intermetal dielectric. © 2005 Materials Research Society.