Title: Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 ?m CMOS technology
Authors: Bock, Karlheinz ×
Russ, Christian
Badenes, Gonçal
Groeseneken, Guido
Deferm, Ludo #
Issue Date: 1997
Host Document: pages:4A-01/01/08
Conference: Electrical Overstress/ Electrostatic Discharge Symposium Proceedings; 23-25 Sept. 1997; Santa Clara, CA, USA. location:Leuven Belgium
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science