Author:

Abstract:

We have studied implant-induced damage, defect annealing and recrystallization of B, P, As and Sb introduced in Ge by ion implantation at high doses, such that concentrations are above the solubility in germanium. The extension of the damage induced in the Ge lattice is increasing with the mass of the implanted ion, as expected. Implanted B produces amorphous regions although crystalline Ge zones are present in the implanted layer. P is a self-amorphizing ion, creating a continuous amorphous layer during implantation. A low thermal budget is however sufficient to fully re-grow the amorphous layer, without evidence of residual defects. High levels of As concentration conversely causes a significantly decrease of the re-growth rate of the damaged layer. Finally, high dose implantation of heavy ions such as Sb induces in Ge dramatic morphologic changes that are not recovered by post-implant anneals.