This item still needs to be validated !
|ITEM METADATA RECORD
|Title: ||Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers|
|Authors: ||Ohyama, Hidenori ×|
Caymax, Matty #
|Issue Date: ||1998 |
|Host Document: ||pages:99-104|
|Conference: ||Epitaxy and Applications of Si-Based Heterostructures; April 13-15, 1998, San Francisco, Calif., USA.|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author|
# (joint) last author|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.
© Web of science