Semiconductors for Room-Temperature Radiation Detector Applications II;, Date: 1997/12/01 - 1997/12/05, Location: MA, BOSTON
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II
Author:
Keywords:
Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Nuclear Science & Technology, Engineering, Materials Science
Abstract:
Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.