Title: Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Authors: Green, Martin ×
Ho, M.Y
Busch, B
Wilk, G.D
Sorsch, T
Conard, Thierry
Brijs, Bert
Vandervorst, Wilfried
Räisänen, P.I
Muller, D
Bude, M
Grazul, J #
Issue Date: 2002
Series Title: Journal of Applied Physics vol:92 issue:12 pages:7168-7172
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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