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Title: Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Authors: Degraeve, Robin ×
Kauerauf, Thomas
Cho, Moon Ju
Zahid, Mohammed
Ragnarsson, Lars-Ake
Brunco, David
Kaczer, Ben
Roussel, Philippe
De Gendt, Stefan
Groeseneken, Guido #
Issue Date: Dec-2005
Publisher: IEEE
Host Document: pages:16/06/01-16/06/04
Conference: Technical Digest International Electronic Devices Meeting (IEDM) location:Leuven Belgium date:05/12/05
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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