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|ITEM METADATA RECORD
|Title: ||Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress|
|Authors: ||Degraeve, Robin ×|
Cho, Moon Ju
De Gendt, Stefan
Groeseneken, Guido #
|Issue Date: ||Dec-2005 |
|Host Document: ||pages:16/06/01-16/06/04|
|Conference: ||Technical Digest International Electronic Devices Meeting (IEDM) location:Leuven Belgium date:05/12/05|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||ESAT - MICAS, Microelectronics and Sensors|
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
× corresponding author|
# (joint) last author|
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