|ITEM METADATA RECORD
|Title: ||Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics|
|Authors: ||Kaczer, Ben ×|
Groeseneken, Guido #
|Issue Date: ||Jun-2005 |
|Series Title: ||Microelectronic Engineering vol:80 pages:122-125|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||ESAT - MICAS, Microelectronics and Sensors|
× corresponding author|
# (joint) last author|
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