|ITEM METADATA RECORD
|Title: ||Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons|
|Authors: ||Takakura, K ×|
Claeys, Corneel #
|Issue Date: ||2003 |
|Series Title: ||Semiconductor Science and Technology vol:18 issue:6 pages:506-511|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
× corresponding author|
# (joint) last author|
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