ITEM METADATA RECORD
Title: A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Authors: Alam, M.A
Green, Martin
Ho, M.Y
Vandervorst, Wilfried
Brijs, Bert
Conard, Thierry
Räisänen, P.I
Issue Date: 2002
Conference: MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS location:Murray Hill, NJ USA date:02/12/02
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Electrical Engineering - miscellaneous

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.