|ITEM METADATA RECORD
|Title: ||A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers|
|Authors: ||Alam, M.A|
|Issue Date: ||2002 |
|Conference: ||MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS location:Murray Hill, NJ USA date:02/12/02|
|Publication status: ||published|
|KU Leuven publication type: ||DI|
|Appears in Collections:||Electrical Engineering - miscellaneous|
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