Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, Date: 2005/09/12 - 2005/09/16, Location: Leuven Belgium
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
Author:
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Instruments & Instrumentation, Physics, Condensed Matter, Engineering, Physics, THERMAL-OXIDATION, STRESS, SI
Abstract:
This paper describes the low-frequency noise behaviour of n-MOSFETs, fabricated in different types of Strained-Silicon (SSi) substrates. It is shown that compared with standard silicon devices, both a lower and a higher LF noise can be obtained for long-channel (L=1 μm) transistors. The noise reduction is ascribed to the inherently better Si-SiO2 interface quality on a tensile-strained silicon substrate. The higher noise has been found in components were it is believed that the strain is completely relaxed, giving rise to extended defects near the active device regions and an associated excess generation-recombination noise component. It will finally be shown that the better noise performance on SSi substrates may become lost for shorter channel lengths (L=0.15 μm), due to the dominance of Random Telegraph Signal fluctuations. © 2005 IEEE.