Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, INTERFACE TRAP FORMATION, HOT-CARRIER DEGRADATION, SI-SIO2 INTERFACE, MOS-TRANSISTORS, CHANNEL MOSFETS, OXIDE TRAPS, LATERAL DISTRIBUTION, ELECTRON INJECTION, STATE DENSITY, N-CHANNEL, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

In this paper, a review is made of the principles and the various applications of charge pumping in submicron MOSFETs. The use of the technique for the analysis of MOSFET degradation, energy, and both lateral and vertical spatial profiling of the interface traps, is discussed. The role and detection of so-called geometric components is illustrated, and the recently discovered ability of the technique to characterise single interface traps in submicron MOSFETs is demonstrated. Finally, the application of charge pumping in other devices, such as SOI-MOSFETs, EEPROM-cells and power transistors is briefly indicated. © 1997 IEEE. Published by Elsevier Science Ltd. All rights reserved.