Title: Mid-infrared LEDs using InAs(0.71)Sb(0.29)/InAs(0.25)In(0.75)As/inAs strained layer superlatticed active layers
Authors: Van Hoof, Chris
Nemeth, Stefan
Grietens, Bob
Dessein, Kristof
Genoe, Jan
Merken, Patrick
Borghs, Staf
Fuchs, F
Wagner, J
Issue Date: 1998
Publisher: IEEE
Host Document: Conference Proceedings 2nd International Conference on Advanced Semiconductor Devices and Microsystems pages:287-290
Conference: ASDAM '98 location:SMOLENICE CASTLE: SLOVAKIA date:5-7 Oct. 1998
Abstract: The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on (001) InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement
ISBN: 0-7803-4909-1
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering

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