Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

De Wolf, Ingrid; Groeseneken, Guido; Maes, Herman; Bolt, M; Barla, K; Reader, A; McNally, PJ

ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS

Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

Author:

De Wolf, Ingrid

Groeseneken, Guido ; Maes, Herman ; Bolt, M ; Barla, K ; Reader, A ; McNally, PJ

Keywords:

Science & Technology, Technology, Materials Science, Multidisciplinary, Mechanics, Materials Science

Abstract:

It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

Author:

Keywords:

Abstract:

ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS

Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage