|ITEM METADATA RECORD
|Title: ||Properties of p-n-diodes made in polysilicon layers with intermediate grain size|
|Authors: ||Beaucarne, Guy|
|Issue Date: ||1998 |
|Conference: ||Polyse '98 - Polycrystalline Semiconductors : Bulk Materials, Thin Films, and Devices; 13-18 September 1998; Schwäbisch Gmünd, G location:Leuven Belgium|
|Publication status: ||published|
|KU Leuven publication type: ||DI|
|Appears in Collections:||ESAT - ELECTA, Electrical Energy Computer Architectures|
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