Title: Properties of p-n-diodes made in polysilicon layers with intermediate grain size
Authors: Beaucarne, Guy
Poortmans, Jef
Caymax, Matty
Nijs, Johan
Mertens, Robert
Issue Date: 1998
Conference: Polyse '98 - Polycrystalline Semiconductors : Bulk Materials, Thin Films, and Devices; 13-18 September 1998; Schwäbisch Gmünd, G location:Leuven Belgium
Publication status: published
KU Leuven publication type: DI
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures

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