New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

Martens, Koen; De Jaeger, Brice; Bonzom, Renaud; Van Steenbergen, Jan; Meuris, Marc; Groeseneken, Guido; Maes, Herman

doi:10.1109/LED.2006.873767

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

Author:

Martens, Koen

De Jaeger, Brice ; Bonzom, Renaud ; Van Steenbergen, Jan ; Meuris, Marc ; Groeseneken, Guido ; Maes, Herman

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, conductance method, electrical characterization, Fermi-level pinning, Ge MOSFET, interface state density extraction, GERMANIUM MOSFETS, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

A method for extracting parameters of weakly Fermi-level pinned germanium (Ge) capacitors is introduced. This method makes progress toward a more generally valid reliable interface state parameter extraction. Such a general method is needed to evaluate and explain the behavior of Ge MOS capacitors, which show characteristics deviating considerably from silicon. The encountered weak pinning confirmed by the new extraction method explains the degraded Ge nMOSFET performance. © 2006 IEEE.