|ITEM METADATA RECORD
|Title: ||Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs|
|Authors: ||Caymax, Matty|
|Issue Date: ||2005 |
|Conference: ||Institute of Thin Films and Interfaces location:Leuven Belgium date:28/06/05|
|Publication status: ||published|
|KU Leuven publication type: ||DI|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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