Title: Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Authors: Eyben, Pierre ×
Alvarez, David
Jurczak, Malgorzata
Rooyackers, Rita
De Keersgieter, An
Augendre, Emmanuel
Vandervorst, Wilfried #
Issue Date: Jan-2004
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:22 issue:1 pages:364-368
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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