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Title: Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Authors: Wang, Wenfei
Derluyn, Joff
Germain, Marianne
De Wolf, Ingrid
Leys, Maarten
Boeykens, Steven
Degroote, Stefan
Ruythooren, Wouter
Das, Johan
Schreurs, Dominique
Nauwelaers, Bart
Borghs, Gustaaf #
Issue Date: Nov-2004
Host Document: MRS (Materials Research Society) Fall Meeting
Conference: MRS (Materials Research Society) Fall Meeting location:Boston, MA, USA date:29 November - 3 December 2004
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT- TELEMIC, Telecommunications and Microwaves
ESAT - ELECTA, Electrical Energy Computer Architectures
Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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