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|ITEM METADATA RECORD
|Title: ||Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure|
|Authors: ||Wang, Wenfei|
De Wolf, Ingrid
Borghs, Gustaaf #
|Issue Date: ||Nov-2004 |
|Host Document: ||MRS (Materials Research Society) Fall Meeting|
|Conference: ||MRS (Materials Research Society) Fall Meeting location:Boston, MA, USA date:29 November - 3 December 2004|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||ESAT- TELEMIC, Telecommunications and Microwaves|
ESAT - ELECTA, Electrical Energy Computer Architectures
Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
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