Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, 0401 Atmospheric Sciences, 0901 Aerospace Engineering, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5104 Condensed matter physics

Abstract:

Carrier illumination (CI), a technique for the nondestructive monitoring and characterization of sub-70 nm structures on whole wafers was discussed. A reliable physical model was established in order to extend the technique's capabilities to depth profiling. The model included three components. First was the doping interface component, which had a cosine behavior for abrupt interfaces. Second was the surface component that caused an upward shift of the CI signal at lower doping concentrations and the final component was the damage interface component due to residual defects.