Title: Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs
Authors: Collaert, Nadine ×
De Meyer, Kristin #
Issue Date: 1999
Series Title: Solid-State Electronics vol:43 issue:12 pages:2173-2180
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science