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|ITEM METADATA RECORD
|Title: ||Improvement of ohmic contacts on AlGaN/GaN HEMTs by using in-situ Si3N4 passivation layer|
|Authors: ||Derluyn, Joff ×|
Van Daele, Benny
Van Tendeloo, Gustaaf
Borghs, Gustaaf #
|Issue Date: ||Jun-2005 |
|Host Document: ||pages:I01|
|Conference: ||11th European Workshop on MOVPE location:Leuven Belgium date:05/06/05|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||ESAT - ELECTA, Electrical Energy Computer Architectures|
Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
× corresponding author|
# (joint) last author|
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