Author:

Keywords:

Science & Technology, Physical Sciences, Physics, Applied, Physics, ELECTRIC-FIELD, BAND TAILS, TRANSPORT, SEMICONDUCTORS, 01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering, Applied Physics, 40 Engineering, 49 Mathematical sciences, 51 Physical sciences

Abstract:

Field and temperature dependencies of the dark dc hopping conductivity were calculated for an algebraic energy distribution of localized states near the Fermi level. These dependencies were shown to merge in a universal dependence of a field-dependent effective temperature. It was observed that although the effective temperature does depend upon a particular choice of the density-of-states (DOS) distribution yet this dependence is not very strong for DOS functions that are not too steep near the Fermi level.