Title: Sealing of porous low-k dielectrics: an ellipsometric porosimetry study of UV-O3 oxidized SiOxCy films
Authors: Whelan, Caroline ×
Le, Quoc Toan
Cecchet, Francesca
Satta, Alessandra
Pireaux, Jean-Jacques
Rudolf, Petra
Maex, Karen #
Issue Date: 2004
Publisher: Electrochemical soc inc
Series Title: Electrochemical and Solid-State Letters vol:7 issue:2 pages:F8-F10
Abstract: The ongoing evolution from SiO2 to insulator materials with lower dielectric constant, k, through the introduction of pores, brings new challenges in terms of processing and reliability. Porosity enhances penetration of undesired chemical species. A method of sealing microporous low-k dielectric chemical vapor deposited silicon oxycarbide films using UV-ozone induced oxidation has been investigated. The film thickness, refractive index, porosity, pore size, and sealing as a function of exposure time have been characterized by ellipsometry. The films are sealed without modification of the underlying porosity, an essential first step in integrating porous materials. (C) 2003 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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