|ITEM METADATA RECORD
|Title: ||Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors|
|Authors: ||Simoen, Eddy ×|
Young, E #
|Issue Date: ||2004 |
|Series Title: ||Applied Physics Letters vol:85 issue:6 pages:1057-1059|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
× corresponding author|
# (joint) last author|
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