Title: Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides
Authors: Houssa, Michel ×
Mertens, Paul
Heyns, Marc #
Issue Date: 1999
Publisher: IOP Pub.
Series Title: Semiconductor science and technology vol:14 issue:10 pages:892-896
ISSN: 0268-1242
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Clinical Residents Medicine
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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