Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, Location: Leuven Belgium
Publication date:
2005-01-01
Volume:
PV 2005-05
Pages:
43 -
49
Publisher:
ECS
Proceedings - Electrochemical Society
Author:
Pawlak, Bartek
Duffy, Ray ; Janssens, Tom ; Vandervorst, Wilfried ; Severi, Simone ; Richard, Olivier ; Benedetti, Alessandro ; Eyben, Pierre ; Colombeau, B ; Cowern, NEB ; Camillo-Castillo, RA ; Jones, KS ; Aboy, M
Abstract:
In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.