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Title: Effects of EOT scaling on electron mobility in PVD TaN-gated HfO2-based nMOSFETs
Authors: Ragnarsson, Lars-Ake
Trojman, Lionel
Severi, Simone
Brunco, David
Kaushik, Vidya
O'Sullivan, Barry
Delabie, Annelies
Tokei, Zsolt
Groeseneken, Guido
De Meyer, Christina
De Gendt, Stefan
Heyns, Marc
Issue Date: 2006
Conference: MRS Spring Meeting Symposium E: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications location:Leuven Belgium date:17/04/06
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors

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