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|ITEM METADATA RECORD
|Title: ||Effects of EOT scaling on electron mobility in PVD TaN-gated HfO2-based nMOSFETs|
|Authors: ||Ragnarsson, Lars-Ake|
De Meyer, Christina
De Gendt, Stefan
|Issue Date: ||2006 |
|Conference: ||MRS Spring Meeting Symposium E: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications location:Leuven Belgium date:17/04/06|
|Publication status: ||published|
|KU Leuven publication type: ||DI|
|Appears in Collections:||Electrical Engineering - miscellaneous|
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
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