Title: Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique
Authors: Dreesen, R
Croes, K
Manca, J
De Ceuninck, W
De Schepper, L
Pergoot, A
Groeseneken, Guido #
Issue Date: Jun-1999
Publisher: Pergamon-elsevier science ltd
Series Title: Microelectronics reliability vol:39 issue:6-7 pages:785-790
Abstract: By using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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