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Title: Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel
Authors: De Vusser, Stijn ×
Schols, Sarah
Steudel, Soeren
Verlaak, Stijn
Genoe, Jan
Oosterbaan, Wibren D
Lutsen, Laurence
Vanderzande, Dirk
Heremans, Paul #
Issue Date: Nov-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:89 issue:22
Article number: 223504
Abstract: The authors have realized a light-emitting organic field-effect transistor. Excitons are generated at the interface between a n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The p-n heterostructure is at a distance of several microns from the metal electrodes. Therefore, the exciton and photon quenching in this device is reduced. Numerical simulations fit well with the experimental data and show that the light-emitting zone can move within the transistor channel. (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

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