Title: Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique
Authors: Rosmeulen, M
Breuil, L
Lorenzini, M
Haspeslag, L
Van Houdt, J
De Meyer, Christina #
Issue Date: Sep-2004
Publisher: Pergamon-elsevier science ltd
Series Title: Solid-state electronics vol:48 issue:9 pages:1525-1530
Abstract: The charge-pumping technique is used for the characterization of the lateral charge distribution in non-volatile memory devices that are based on localized trapping of charge. The lateral charge distribution is calculated directly from charge-pumping measurements using a deconvolution-based procedure. Memory cells employing either a silicon-rich-oxide or Si3N4 trapping medium have been analyzed. Electrons are injected into the trapping medium using channel-hot-electron-injection. The influence of programming pulse width, retention time and device channel length oil the lateral charge distribution has been investigated. (C) 2004 Elsevier Ltd. All rights reserved.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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