IEEE Transactions on electron devices vol:39 issue:5 pages:1150-1156
When applying a high voltage to the floating gate of a split-gate transistor, enhanced hot-electron injection is observed that can be used for 5-V-compatible EPROM or Flash EEPROM device operation. The current collected on the gate is equal to the total electron injection current. Charge-pumping measurements and device simulations are used to analyze the electron injection and to determine its exact position in the transistor channel. Gate currents only show a weak dependence on both transistor channel lengths. The width of the spacer between both transistor gates has however been determined to be an important injection parameter.