Title: Analysis of the enhanced hot-electron injection in split-gate transistors useful for eeprom applications
Authors: Vanhoudt, J ×
Heremans, Paul
Deferm, L
Groeseneken, Guido
Maes, He #
Issue Date: May-1992
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:39 issue:5 pages:1150-1156
Abstract: When applying a high voltage to the floating gate of a split-gate transistor, enhanced hot-electron injection is observed that can be used for 5-V-compatible EPROM or Flash EEPROM device operation. The current collected on the gate is equal to the total electron injection current. Charge-pumping measurements and device simulations are used to analyze the electron injection and to determine its exact position in the transistor channel. Gate currents only show a weak dependence on both transistor channel lengths. The width of the spacer between both transistor gates has however been determined to be an important injection parameter.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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