Voltage variant source side injection for multilevel charge storage in flash EEPROM
Montanari, D Van Houdt, J Wellekens, D Vanhorebeek, G Haspeslagh, L Deferm, L Groeseneken, Guido Maes, HE #
Ieee-inst electrical electronics engineers inc
IEEE Transactions on components packaging and manufacturing technology part a vol:20 issue:2 pages:196-202
The growing demand for high-density Flash memories in portable computing, smart cards, and telecommunications applications has boosted the efforts on Flash memory cell size scaling and cost reduction , In order to further increase the storage capability and, consequently, reduce the cost per bit of Flash memories, multilevel charge storage (MLCS) techniques have recently gained a lot of interest , , Furthermore, MLCS is considered a viable route for increasing embedded Flash density as well, The devices investigated so far, rely either on conventional channel hot electron (CHE) injection or on Fowler-Nordheim tunneling (FNT) for programming .