ITEM METADATA RECORD
Title: Voltage variant source side injection for multilevel charge storage in flash EEPROM
Authors: Montanari, D
Van Houdt, J
Wellekens, D
Vanhorebeek, G
Haspeslagh, L
Deferm, L
Groeseneken, Guido
Maes, HE #
Issue Date: Jun-1997
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on components packaging and manufacturing technology part a vol:20 issue:2 pages:196-202
Abstract: The growing demand for high-density Flash memories in portable computing, smart cards, and telecommunications applications has boosted the efforts on Flash memory cell size scaling and cost reduction [1], In order to further increase the storage capability and, consequently, reduce the cost per bit of Flash memories, multilevel charge storage (MLCS) techniques have recently gained a lot of interest [1], [2], Furthermore, MLCS is considered a viable route for increasing embedded Flash density as well, The devices investigated so far, rely either on conventional channel hot electron (CHE) injection or on Fowler-Nordheim tunneling (FNT) for programming [3].
URI: 
ISSN: 1070-9886
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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