Analytical percolation model for predicting anomalous charge loss in flash memories
Degraeve, R Schuler, E Kaczer, B Lorenzini, M Wellekens, D Hendrickx, P van Duuren, M Dormans, GJM Van Houdt, J Haspeslagh, L Groeseneken, Guido Tempel, G #
Ieee-inst electrical electronics engineers inc
IEEE Transactions on electron devices vol:51 issue:9 pages:1392-1400
Data retention in flash memories is limited by anomalous charge loss. In this work, this phenomenon is modeled with a percolation concept. An analytical model is constructed that relates the charge-loss distribution of moving bits in flash memories with the geometric distribution of oxide traps. The oxide is characterized by a single parameter, the trap density. Combined with a trap-to-trap direct tunneling model, the physical parameters of the electron traps involved in the leakage mechanism are determined. Flash memory failure rate predictions for different oxide qualities, thicknesses and tunnel-oxide voltages are calculated.