Title: Analytical percolation model for predicting anomalous charge loss in flash memories
Authors: Degraeve, R
Schuler, E
Kaczer, B
Lorenzini, M
Wellekens, D
Hendrickx, P
van Duuren, M
Dormans, GJM
Van Houdt, J
Haspeslagh, L
Groeseneken, Guido
Tempel, G #
Issue Date: Sep-2004
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:51 issue:9 pages:1392-1400
Abstract: Data retention in flash memories is limited by anomalous charge loss. In this work, this phenomenon is modeled with a percolation concept. An analytical model is constructed that relates the charge-loss distribution of moving bits in flash memories with the geometric distribution of oxide traps. The oxide is characterized by a single parameter, the trap density. Combined with a trap-to-trap direct tunneling model, the physical parameters of the electron traps involved in the leakage mechanism are determined. Flash memory failure rate predictions for different oxide qualities, thicknesses and tunnel-oxide voltages are calculated.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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