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Title: Performance of direct tunneling floating gate memory with medium-k dielectrics for embedded-random-access memory applications
Authors: Govoreanu, B
Degraeve, R
Kauerauf, Thomas
Magnus, W
Wellekens, D
Groeseneken, Guido
Van Houdt, J #
Issue Date: Apr-2006
Publisher: Inst pure applied physics
Series Title: Japanese journal of applied physics part 1-regular papers brief communications & review papers vol:45 issue:4B pages:3170-3175
Abstract: We propose the use of medium-kappa dielectrics for direct tunneling floating gate memory devices, targeting embedded-random-access memory (e-RAM) applications. We found that SiON offers best performance if voltage reduction overrules refresh time, while Hf-silicates would be preferred if the refresh time is more critical. Our analysis is based on a direct tunneling current model, a response surface methodology and experimental data on small metal-oxide-semiconductor field-effect transistors (MOSFET's). The impact of dielectric degradation during cycling is studied for scalability towards the 32 nm node.
URI: 
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering - miscellaneous
# (joint) last author

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