ITEM METADATA RECORD
Title: Single poly cell as the best choice for radiation-hard floating-gate eeprom technology
Authors: Wellekens, D ×
Groeseneken, Guido
Vanhoudt, J
Maes, He #
Issue Date: Dec-1993
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Nuclear Science vol:40 issue:6 pages:1619-1627
Abstract: The total dose radiation response of two classes of floating gate nonvolatile memory devices is examined. While the hardness of commonly studied double polysilicon cells is restricted to a few kilorads, devices having only one polysilicon layer are shown to be much more radiation-hard. This is mainly due to the thinner oxide that can be used in the coupling capacitor of such cells. It is also shown that the contribution of the field oxide regions, present under the floating gate of the cells, is of major importance for their radiation response. Finally, the programming behaviour of the devices is shown to remain fairly unaffected by the ionizing radiation.
URI: 
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science