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Title: Enhanced tunneling current effect for nonvolatile memory applications
Authors: Govoreanu, B
Blomme, Pieter
Van Houdt, J
De Meyer, Christina #
Issue Date: Apr-2003
Publisher: Inst pure applied physics
Series Title: Japanese journal of applied physics part 1-regular papers short notes & review papers vol:42 issue:4B pages:2020-2024
Abstract: High-k insulators are currently considered for SiO2 replacement as gate dielectrics in sub-100nm complementary metal-oxide-semiconductor (CMOS) technology nodes. The use of double-layer high-k stacks as tunnel dielectrics could bring important benefits in the nonvolatile memory operation by either reducing the operating voltages and/or increasing the, programming speed. In this paper, the influence of the high-k parameters on the tunneling current and requirements for achieving higher programming speed without compromising retention are discussed. We show that enhancement of the tunneling current is possible with two-layer low-k/high-k dielectric stacks and confirm the theoretical results based on our experimental data.
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
# (joint) last author

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