Title: SILC-related effects in flash (EPROM)-P-2's - Part II: Prediction of steady-state SILC-related disturb characteristics
Authors: De Blauwe, J
Van Houdt, J
Wellekens, D
Groeseneken, Guido
Maes, HE #
Issue Date: Aug-1998
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:45 issue:8 pages:1751-1760
Abstract: In this paper, a new methodology is developed, and applied thereafter, to predict the disturb characteristics of an arbitrary Flash (EPROM)-P-2 device which are related to steady-state stress induced leakage current (SILC) [1], This prediction methodology is based on a quantitative model for steady-state SILC, which has been developed on capacitors and nFET's as was reported earlier in Part I, Here, this model is shown to be also valid for tunnel oxide Flash (EPROM)-P-2 devices, and used thereafter in a consistent and well-understood cell optimization procedure. The model requires as only input basic cell parameters and an oxide qualification obtained at the capacitor and transistor level.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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