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Title: New operating mode based on electron/hole profile matching in nitride-based nonvolatile memories
Authors: Furnémont, Arnaud
Rosmeulen, M
van der Zanden, K
Van Houdt, J
De Meyer, Christina
Maes, Herman #
Issue Date: Apr-2007
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:28 issue:4 pages:276-278
Abstract: A new operating mode for the nitride-based nonvolatile memory cells using channel hot electron injection for programming and hot hole injection for erasing is presented. The mismatch between the injected electron and hole profiles during programming and erasing operations, which limits the performance of the device, can be prevented. The profiles, extracted from charge-pumping measurements, are tuned by changing the operating voltages in order to have matched distributions. Substantial improvements in endurance and subsequent high-temperature data retention are demonstrated.
URI: 
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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