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Title: CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode
Authors: Muller, R ×
Naulaerts, R
Billen, J
Genoe, Jan
Heremans, Paul #
Issue Date: Feb-2007
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:90 issue:6
Article number: 063503
Abstract: Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au/CuTCNQ/Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity. (c) 2007 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

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